Cross-section of a Semiconductor Trench

In this sample, a trench in a semiconductor device is cross-sectioned and imaged by the Vista-IR microscope. Two different materials are highlighted based on the unique IR absorption bands for each material. Twenty-five spectra are acquired across the interface of the two materials, with 10 nm spacing between each spectrum. Looking at the peak at 1100 cm-1, the transition from one material to the other takes place at spectra between 18 and 20.

Analyzing a Cross-section of a Semiconductor Trench

PiFM provides local chemical information with sub-10 nm spatial resolution, as demonstrated by the gradual transition between these spectra.

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