May 2019

Analyzing a Cross-section of a Semiconductor Trench

Cross-section of a Semiconductor Trench

In this sample, a trench in a semiconductor device is cross-sectioned and imaged by the Vista-IR microscope. Two different materials are highlighted based on the unique IR absorption bands for each material. Twenty-five spectra are acquired across the interface of the two materials, with 10 nm spacing between each spectrum. Looking at the peak at […] Read more

  • email:
    (408) 915-2595

    6840 Via Del Oro
    Suite 110
    San Jose, CA 95119

  • Join the PiFM Community!

    Receive updates on our latest applications & upcoming events.